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| Savybės | |
|---|---|
| Flash Memory Cell Technology | Triple-Level Cell |
| Maximum Power Consumption | 4.3 Vats |
| Maximum Random Read Rate | 86000 IOPS |
| Maximum Random Write Rate | 30000 IOPS |
| Maximum Sequential Read Rate | 550 Megabaits sekundē |
| Maximum Sequential Write Rate | 510 Megabaits sekundē |
| Mean Time Between Failures | 2000000 stunda |
| Memory Technology | 3D NAND |
| Minimum Power Consumption | 1.4 Vats |
| Non-Recoverable Errors | 1 per 10^17 |
| Shock Tolerance Operating | 1000G @ 0.5ms |
| Shock Tolerance Storage | 1000G @ 0.5ms |
| Storage Capacity | 7.68 terabaits |
| Supports Data Channel | SATA III-600 |
| Vibration Tolerance Operating | 2.17G @ 5-700Hz |
| Vibration Tolerance Storage | 3.13G @ 5-800Hz |
